SKM200GB125D德国原装赛米控Semikron西门康功率IGBT ,高频变频IGBT

¥430.00 1 - 9
¥400.00 10 - 99
¥380.00 ≥100

参数

IGBT产品特性
Semikron西门康品牌
SKM200GB125D型号

发货地江苏昆山市 1天内发货供货总量10000个

江苏誉优电子科技有限公司 5年: 进入店铺在线咨询

SKM300GB125D德国原装赛米控Semikron西门康功率IGBT ,高频变频IGBT ¥500.00

SKM400GB125D德国原装赛米控Semikron西门康功率IGBT高频变频誉优 ¥600.00

MCC162-14IO1 MCC162-08I01 XYS艾赛斯可控硅IXYS模块-誉优科技 ¥160.00

MCC162/16IO1德国IXYS晶闸管全新原装艾赛斯可控硅-誉优科技 ¥160.00

MCC200-16IO1德国IXYS艾赛斯功率二极管/晶闸管模块全新原装现货可控硅-江苏誉优 ¥170.00

MCC255-14IO1德国IXYS艾赛斯功率二极管/晶闸管模块全新原装现货可控硅-江苏誉优 ¥400.00

产品详情

SKM200GB125D

IGBT Modules
SEMITRANS 3 (106x62x31)

Part Number	22890620
Product Status	Not for new designs
Housing	SEMITRANS 3 (106x62x31)
(LLxBBxHH)	106x62x31
Switches	Half Bridge
VCES in V	1200
ICnom in A	150
Technology	NPT IGBT (Ultrafast)

IGBT Modules

Product Type	Product Line	VCES in V	ICnom in A	Switches	Technology	Product Status
SKM200GB063D	SEMITRANS 3 (106x62x31)	600	200	Half Bridge	NPT IGBT (Standard)	Discontinued
SKM200GB12V	SEMITRANS 3 (106x62x31)	1200	200	Half Bridge	V-IGBT	In production
SKM200GB12E4	SEMITRANS 3 (106x62x31)	1200	200	Half Bridge	IGBT 4 (Trench)	In production
SKM200GB12T4	SEMITRANS 3 (106x62x31)	1200	200	Half Bridge	IGBT 4 Fast (Trench)	In production
SKM200GB126D	SEMITRANS 3 (106x62x31)	1200	150	Half Bridge	IGBT 3 (Trench)	In production
SKM200GB125D	SEMITRANS 3 (106x62x31)	1200	150	Half Bridge	NPT IGBT (Ultrafast)	Not for new designs
SKM200GB176D	SEMITRANS 3 (106x62x31)	1700	150	Half Bridge	IGBT 3 (Trench)	In production
SKM200GB173D	SEMITRANS 3 (106x62x31)	1700	150	Half Bridge	NPT IGBT (Standard)	Terminated
SKM200GB17E4	SEMITRANS 3 (106x62x31)	1700	200	Half Bridge	IGBT 4 (Trench)	In production
SKM200GB12F4	SEMITRANS 3 (106x62x31)	1200	200	Half Bridge	IGBT 4 High Speed (Trench)	In production new

Hybrid SiC

Product Type	Product Line	VCE in V	ICnom in A	Switches	Technology	Product Status
SKM200GB12T4SiC2	SEMITRANS 3 (106x62x31)	1200	200	Half Bridge	SiC Diode + IGBT 4 (Trench)	Sample status
SKM200GB12F4SiC2	SEMITRANS 3 (106x62x31)	1200	200	Half Bridge	SiC Diode + IGBT 4 fast (Trench)	Sample status
SKM200GB12F4SiC3	SEMITRANS 3 (106x62x31)	1200	200	Half Bridge	SiC Diode + IGBT 4 fast (Trench)	Sample status

IGBT模块实现性能

赛米控提供SEMITRANS、SEMiX、SKiM、MiniSKiiP和SEMITOP封装形式的IGBT（绝缘栅双极晶体管）模块，支持不同的拓扑结构、额定电流和电压。这些IGBT模块的电流范围为4A至1400A，电压级别为600V至1800V。它们可用于各种应用，并采用多项关键技术，如烧结以及实现快捷装配的弹簧或press-fit连接。提供不同的拓扑结构，提供不同的拓扑结构，如CIB（整流-逆变-制动）、半桥、H桥、三相全桥和三电平等，涵盖几乎所有应用领域。结合***的IGBT芯片和赛米控的CAL二极管技术。***代IGBT7已正式应用于赛米控功率模块，其带来更高功率密度并确立了新的性能评价基准，特别是在电机驱动和太阳能应用中。

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