Features | |
Access network for long distance 长距离传输 | Low dependence of electrical and optical characteristics over temperature 温度对光学性能影响小 |
Local area network 本地网 | |
Gigabit Ethernet G以太网 | Data rates up to 4 Gbps 速率4Gbps |
Parameter | unit | Min. | Typ. | Max. | notes |
Threshold current | mA | 1 | |||
Forward voltage | V | 3 | |||
Series resistance | 300 | 500 | |||
Output power | mW | 0.7 | 1.0 | ||
Wavelength | nm | 840 | 850 | 860 | |
Side mode suppression | dB | 25 | 30 | ||
Peak temperature dependence | nm/℃ | 0.06 | T=0 to 85 | ||
Beam divergence | Degree | 24 |
补充:
目前850nm单模速率只能提供到4Gbps,更多信息请联系我们。
产品封装具有多样选择性,有TO封装和同轴光纤输出。
可内置TEC和PD。
可提供芯片(Chip)和芯片阵列(Chip Array)。