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GVC736BE101 3BHE019719R0101 半导体IGCT模块晶闸管结构器件
GVC736BE101 3BHE019719R0101 半导体IGCT模块晶闸管结构器件
GVC736BE101 3BHE019719R0101 半导体IGCT模块晶闸管结构器件ABB半导体公司开一个新的反向技术平台传导集成门关闭4500 V和6500 V两种电压等级的晶闸管（RC-IGCT）。这些设备经过优化，可用于工业中压驱动（MVD）、风电转换、STATCOM、电能质量和铁路潮间带等应用。主要在于状态非常低晶闸管结构提供的损耗半导体和高可靠性设备。该技术支持更改栅极电路，启用大大改善了关断电流。此外，HPT+IGCT单元导致提高了在高结温下的性能。对一揽子计划导致热阻以及处理浪涌电流的固有容量。栅极电路阻抗触点移动到设备的外围对于更大的面积消耗和栅极触点的中心公差晶片上的情况有了很大的改善。因此尽管新触点的直径更大大门基础设施可能会减少而不是增加。器件在低正向电流和高电池电压下的行为整个温度范围很重要。切换行为可以是通过二极管的增加而得到改善厚此外，它特别对于RC IGCT优化集成导致的二极管厚度开关和同一二极管的硅片。总之，晶圆方面的改进诸如栅极电路阻抗和消除热瓶颈的技术，整体煤气化联合循环的性能得到了改善不增加尺寸IGCT部分。新设备可以应用于广的应用。一个例子用于设备平台的是静态补偿器（STATCOM）使用多级转换器拓扑结构（MMC）涵盖广的应用，如工业、公用事业、铁路工业和可再生能源在100MVAr范围内的应用。该设备被认为是该拓扑结构的佳解决方案，因为与IGBT选项。
GVC736BE101 3BHE019719R0101 半导体IGCT模块晶闸管结构器件
Following on from the information in the last Newsletter about some techniques used in Failure Analysis (Spreading Resistance, Surface Profilometry, and Hot Spot Measurements), here we present maybe the most important technique in semiconductor analysis: the Scanning Electron Microscopy (SEM). Optical microscopes are limited to a magnification of about 1000x. However, the analysis of semiconductor devices requires the investigation of very small structures with dimensions of less than 1 micrometer. Therefore a microscope capable of much higher magnification is needed. A scanning electron microscope (SEM) uses a focused electron beam to create images of a sample’s surface, providing magnification of up to about 200,000x. An example of the 10,000x magnification of a cell is shown in the picture below: The diagram below shows how the primary electron beam interacts with the material leading to different responses. Secondary electrons can be collected which come from only the top 100 nanometers of the sample, these then give information about the topography of the surface. Backscattered electrons SEM / EDX technique interact with the sample up to a depth of a few microns, and their energy reflects the material composition. In a backscatter image, heavier elements appear brighter than lighter elements. Energy Dispersive X-Ray Spectroscopy (EDX) Energy Dispersive X-Ray Spectroscopy (EDX) is an analytical technique for element identification using the characteristic X-rays given off by a sample during SEM investigation.
ABB 3BHE019719R0101 GVC736BE101
ABB 5SHX1960L0006 3BHB016120R0002 3BHE019719R0101 GVC736BE101
ABB 5SHY4045L0003 3BHB021400 3BHE019719R0101 GVC736BE101
GE DS200ITXDG1ABA
EMERSON 1C31166G02
MOTOROLA MVME2432
ABB P10800K02+HN800K02
REXROTH VM310
LAM 810-046015-010
Alstom MAE99-04
EMERSON VE3008 CE3008 KJ2005X1-MQ1 12P6381X022
EMERSON VE3008 CE3008 KJ2005X1-MQ1 12P6381X042
GE IS220UCSAH1A
KOLLMORGEN S21260-SRS
ABB MB810
ABB UAC389AE02 HIEE300888R0002
PROSOFT MVI56E-MNET
PTM PSMU-350-3
ADEPT AWCII 040 10350-00104
REXROTH LT304
GVC736BE101 3BHE019719R0101 半导体IGCT模块晶闸管结构器件
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